Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFS7730PBF
Herstellerteilenummer | IRFS7730PBF |
---|---|
Zukünftige Teilenummer | FT-IRFS7730PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET®, StrongIRFET™ |
IRFS7730PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 75V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 195A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 100A, 10V |
Vgs (th) (Max) @ Id | 3.7V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 407nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 13660pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 375W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFS7730PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFS7730PBF-FT |
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