Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXFA3N120
Herstellerteilenummer | IXFA3N120 |
---|---|
Zukünftige Teilenummer | FT-IXFA3N120 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HiPerFET™ |
IXFA3N120 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 1.5mA |
Gateladung (Qg) (Max) @ Vgs | 39nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1050pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 200W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263 (IXFA) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXFA3N120 Gewicht | kontaktiere uns |
Ersatzteilnummer | IXFA3N120-FT |
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