Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXFH22N60P
Herstellerteilenummer | IXFH22N60P |
---|---|
Zukünftige Teilenummer | FT-IXFH22N60P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HiPerFET™, PolarHT™ |
IXFH22N60P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 22A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 11A, 10V |
Vgs (th) (Max) @ Id | 5.5V @ 4mA |
Gateladung (Qg) (Max) @ Vgs | 58nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 3600pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 400W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXFH22N60P Gewicht | kontaktiere uns |
Ersatzteilnummer | IXFH22N60P-FT |
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