Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / MMFT960T1
Herstellerteilenummer | MMFT960T1 |
---|---|
Zukünftige Teilenummer | FT-MMFT960T1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
MMFT960T1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 300mA (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 1A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 3.2nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 65pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 800mW (Ta) |
Betriebstemperatur | -65°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-223 |
Paket / fall | TO-261-4, TO-261AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMFT960T1 Gewicht | kontaktiere uns |
Ersatzteilnummer | MMFT960T1-FT |
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