Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / MMIX1F160N30T
Herstellerteilenummer | MMIX1F160N30T |
---|---|
Zukünftige Teilenummer | FT-MMIX1F160N30T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | GigaMOS™, HiperFET™, TrenchT2™ |
MMIX1F160N30T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 300V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 102A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 60A, 10V |
Vgs (th) (Max) @ Id | 5V @ 8mA |
Gateladung (Qg) (Max) @ Vgs | 335nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2800pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 570W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 24-SMPD |
Paket / fall | 24-PowerSMD, 21 Leads |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMIX1F160N30T Gewicht | kontaktiere uns |
Ersatzteilnummer | MMIX1F160N30T-FT |
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