Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMG4N60SJ3
Herstellerteilenummer | DMG4N60SJ3 |
---|---|
Zukünftige Teilenummer | FT-DMG4N60SJ3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMG4N60SJ3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 14.3nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 532pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 41W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-251 |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMG4N60SJ3 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMG4N60SJ3-FT |
STWA70N60DM2
STMicroelectronics
APTC60SKM24CT1G
Microsemi Corporation
APTM100DA18TG
Microsemi Corporation
APTM100DA33T1G
Microsemi Corporation
APTM100DAM90G
Microsemi Corporation
APTM100SK33T1G
Microsemi Corporation
APTM100UM60FAG
Microsemi Corporation
APTM100UM65DAG
Microsemi Corporation
APTM10DAM02G
Microsemi Corporation
APTM10DAM05TG
Microsemi Corporation
LFXP6E-3TN144C
Lattice Semiconductor Corporation
EX64-TQG100I
Microsemi Corporation
XCV1000E-8FG900C
Xilinx Inc.
A3P400-1FGG484I
Microsemi Corporation
A3P600-1FG256I
Microsemi Corporation
EP3SE50F484I3
Intel
EP2AGX125DF25C5N
Intel
5SGXMA7N2F45I2N
Intel
5SGXMA5H2F35C2LN
Intel
EP3SL150F780C4
Intel