Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / NSV12100XV6T1G
Herstellerteilenummer | NSV12100XV6T1G |
---|---|
Zukünftige Teilenummer | FT-NSV12100XV6T1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NSV12100XV6T1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | PNP |
Stromabnehmer (Ic) (max.) | 1A |
Spannung - Durchschlag Kollektoremitter (max.) | 12V |
Vce-Sättigung (max.) @ Ib, Ic | 440mV @ 100mA, 1A |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 500mA, 2V |
Leistung max | 650mW |
Frequenz - Übergang | - |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSV12100XV6T1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NSV12100XV6T1G-FT |
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