Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / NSVB123JPDXV6T1G
Herstellerteilenummer | NSVB123JPDXV6T1G |
---|---|
Zukünftige Teilenummer | FT-NSVB123JPDXV6T1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NSVB123JPDXV6T1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 2.2 kOhms |
Widerstand - Emitterbasis (R2) | 4.7 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 5mA, 10V |
Vce-Sättigung (max.) @ Ib, Ic | 250mV @ 300µA, 10mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | - |
Leistung max | 500mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVB123JPDXV6T1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NSVB123JPDXV6T1G-FT |
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