Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - RF / NSVF6003SB6T1G
Herstellerteilenummer | NSVF6003SB6T1G |
---|---|
Zukünftige Teilenummer | FT-NSVF6003SB6T1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
NSVF6003SB6T1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | NPN |
Spannung - Durchschlag Kollektoremitter (max.) | 12V |
Frequenz - Übergang | 7GHz |
Rauschzahl (dB Typ @ f) | 3dB @ 1GHz |
Gewinnen | 9dB |
Leistung max | 800mW |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 50mA, 5V |
Stromabnehmer (Ic) (max.) | 150mA |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-CPH |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVF6003SB6T1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NSVF6003SB6T1G-FT |
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