Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTD3813N-1G
Herstellerteilenummer | NTD3813N-1G |
---|---|
Zukünftige Teilenummer | FT-NTD3813N-1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTD3813N-1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 16V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.6A (Ta), 51A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8.75 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 12.8nC @ 4.5V |
Vgs (Max) | ±16V |
Eingangskapazität (Ciss) (Max) @ Vds | 963pF @ 12V |
FET-Funktion | - |
Verlustleistung (max.) | 1.2W (Ta), 34.9W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I-PAK |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTD3813N-1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTD3813N-1G-FT |
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