Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / NVMFD5C650NLT1G
Herstellerteilenummer | NVMFD5C650NLT1G |
---|---|
Zukünftige Teilenummer | FT-NVMFD5C650NLT1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
NVMFD5C650NLT1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 21A (Ta), 111A (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 98µA |
Gateladung (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 2546pF @ 25V |
Leistung max | 3.5W (Ta), 125W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMFD5C650NLT1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NVMFD5C650NLT1G-FT |
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