Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PMFPB8032XP,115
Herstellerteilenummer | PMFPB8032XP,115 |
---|---|
Zukünftige Teilenummer | FT-PMFPB8032XP,115 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PMFPB8032XP,115 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 102 mOhm @ 2.7A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 550pF @ 10V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 485mW (Ta), 6.25W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-HUSON-EP (2x2) |
Paket / fall | 6-UDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PMFPB8032XP,115 Gewicht | kontaktiere uns |
Ersatzteilnummer | PMFPB8032XP,115-FT |
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