Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PMV30UN2VL
Herstellerteilenummer | PMV30UN2VL |
---|---|
Zukünftige Teilenummer | FT-PMV30UN2VL |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchMOS™ |
PMV30UN2VL Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.4A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 4.2A, 4.5V |
Vgs (th) (Max) @ Id | 900mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 655pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 490mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-236AB |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PMV30UN2VL Gewicht | kontaktiere uns |
Ersatzteilnummer | PMV30UN2VL-FT |
NP70N10KUF-E2-AY
Renesas Electronics America
NP75P04YLG-E1-AY
Renesas Electronics America
NP80N04KHE-E1-AZ
Renesas Electronics America
NP80N055KLE-E2-AY
Renesas Electronics America
NP80N055NDG-S18-AY
Renesas Electronics America
NP82N04NUG-S18-AY
Renesas Electronics America
NP82N04PUG(1)-E1B-AY
Renesas Electronics America
NP82N10PUF-E1-AY
Renesas Electronics America
NP84N075KUE-E2-AY
Renesas Electronics America
NP88N04KUG-E1-AY
Renesas Electronics America
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel