Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN4R2-30MLDX
Herstellerteilenummer | PSMN4R2-30MLDX |
---|---|
Zukünftige Teilenummer | FT-PSMN4R2-30MLDX |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PSMN4R2-30MLDX Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 70A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 29.3nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1795pF @ 15V |
FET-Funktion | Schottky Diode (Body) |
Verlustleistung (max.) | 65W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | LFPAK33 |
Paket / fall | SOT-1210, 8-LFPAK33 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN4R2-30MLDX Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN4R2-30MLDX-FT |
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