Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN7R6-60XSQ
Herstellerteilenummer | PSMN7R6-60XSQ |
---|---|
Zukünftige Teilenummer | FT-PSMN7R6-60XSQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PSMN7R6-60XSQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 51.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 4.6V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 38.7nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2651pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 46W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220F |
Paket / fall | TO-220-3 Full Pack, Isolated Tab |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN7R6-60XSQ Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN7R6-60XSQ-FT |
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