Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / R6012FNX
Herstellerteilenummer | R6012FNX |
---|---|
Zukünftige Teilenummer | FT-R6012FNX |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
R6012FNX Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 510 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | 5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1300pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 50W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220FM |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
R6012FNX Gewicht | kontaktiere uns |
Ersatzteilnummer | R6012FNX-FT |
SFR9110TF
ON Semiconductor
SSR1N60BTM
ON Semiconductor
SSR1N60BTM-WS
ON Semiconductor
SSR1N60BTM_F080
ON Semiconductor
TJ10S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ30S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ50S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
AT40K40AL-1BQI
Microchip Technology
XC4005XL-3PQ100C
Xilinx Inc.
APA600-BG456I
Microsemi Corporation
A42MX36-1PQG208I
Microsemi Corporation
EP2S15F484C3
Intel
EP1S10F484C7N
Intel
EP1K30FC256-2
Intel
EP2AGX45DF25I5
Intel
LFE2M70SE-6F900I
Lattice Semiconductor Corporation
LFXP2-5E-7M132C
Lattice Semiconductor Corporation