Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RF4E100AJTCR
Herstellerteilenummer | RF4E100AJTCR |
---|---|
Zukünftige Teilenummer | FT-RF4E100AJTCR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RF4E100AJTCR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 10A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 1460pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | HUML2020L8 |
Paket / fall | 8-PowerUDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RF4E100AJTCR Gewicht | kontaktiere uns |
Ersatzteilnummer | RF4E100AJTCR-FT |
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