Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK5012DPE-00#J3
Herstellerteilenummer | RJK5012DPE-00#J3 |
---|---|
Zukünftige Teilenummer | FT-RJK5012DPE-00#J3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK5012DPE-00#J3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 620 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1100pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 4-LDPAK |
Paket / fall | SC-83 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK5012DPE-00#J3 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK5012DPE-00#J3-FT |
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