Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK6013DPE-00#J3
Herstellerteilenummer | RJK6013DPE-00#J3 |
---|---|
Zukünftige Teilenummer | FT-RJK6013DPE-00#J3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK6013DPE-00#J3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 5.5A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 37.5nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 4-LDPAK |
Paket / fall | SC-83 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK6013DPE-00#J3 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK6013DPE-00#J3-FT |
RQK0607AQDQS#H1
Renesas Electronics America
RJK60S7DPP-E0#T2
Renesas Electronics America
RJK0703DPP-E0#T2
Renesas Electronics America
RJK1001DPP-E0#T2
Renesas Electronics America
RJK1002DPP-E0#T2
Renesas Electronics America
RJK1003DPP-E0#T2
Renesas Electronics America
RJK5012DPP-E0#T2
Renesas Electronics America
RJK5013DPP-E0#T2
Renesas Electronics America
RJK5014DPP-E0#T2
Renesas Electronics America
RJK5026DPP-E0#T2
Renesas Electronics America
A54SX32-1TQ144M
Microsemi Corporation
LFXP3E-3T100I
Lattice Semiconductor Corporation
A3P400-2FGG256I
Microsemi Corporation
LCMXO2-256HC-4SG32I
Lattice Semiconductor Corporation
LFE5UM-85F-7BG554C
Lattice Semiconductor Corporation
A3P125-1VQG100
Microsemi Corporation
EP2C15AF484C8N
Intel
5SGXEB6R3F40I3L
Intel
XC4036XL-3HQ208C
Xilinx Inc.
XC6SLX45-L1CSG324C
Xilinx Inc.