Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / RN1317(TE85L,F)
Herstellerteilenummer | RN1317(TE85L,F) |
---|---|
Zukünftige Teilenummer | FT-RN1317(TE85L,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN1317(TE85L,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | NPN - Pre-Biased |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | 4.7 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz |
Leistung max | 100mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-70, SOT-323 |
Supplier Device Package | USM |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1317(TE85L,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN1317(TE85L,F)-FT |
RN1105MFV,L3F
Toshiba Semiconductor and Storage
RN1106MFV(TL3,T)
Toshiba Semiconductor and Storage
RN1109MFV,L3F
Toshiba Semiconductor and Storage
RN1131MFV(TL3,T)
Toshiba Semiconductor and Storage
RN2104MFV,L3F
Toshiba Semiconductor and Storage
RN2107MFV,L3F
Toshiba Semiconductor and Storage
RN2118MFV(TPL3)
Toshiba Semiconductor and Storage
RN2119MFV(TPL3)
Toshiba Semiconductor and Storage
RN1406,LF
Toshiba Semiconductor and Storage
RN1402,LF
Toshiba Semiconductor and Storage
XC5206-6PQ100C
Xilinx Inc.
XC3SD3400A-5FGG676C
Xilinx Inc.
M2GL025-1VFG256I
Microsemi Corporation
A42MX09-3VQ100I
Microsemi Corporation
EP2C70F672C8N
Intel
10CX150YF672I6G
Intel
XC2VP30-5FFG1152I
Xilinx Inc.
LCMXO2-4000HC-4BG332I
Lattice Semiconductor Corporation
LFE3-70E-6FN484I
Lattice Semiconductor Corporation
EPF10K130EQC240-2X
Intel