Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / RN2101ACT(TPL3)
Herstellerteilenummer | RN2101ACT(TPL3) |
---|---|
Zukünftige Teilenummer | FT-RN2101ACT(TPL3) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2101ACT(TPL3) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | PNP - Pre-Biased |
Stromabnehmer (Ic) (max.) | 80mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | 4.7 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 150mV @ 500µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | - |
Leistung max | 100mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2101ACT(TPL3) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2101ACT(TPL3)-FT |
RN1106,LF(CT
Toshiba Semiconductor and Storage
RN1113(T5L,F,T)
Toshiba Semiconductor and Storage
RN2101,LF(CT
Toshiba Semiconductor and Storage
RN2112,LF(CT
Toshiba Semiconductor and Storage
RN1101,LF(CT
Toshiba Semiconductor and Storage
RN1103,LF(CT
Toshiba Semiconductor and Storage
RN1105,LF(CT
Toshiba Semiconductor and Storage
RN1109,LF(CT
Toshiba Semiconductor and Storage
RN1110,LF(CT
Toshiba Semiconductor and Storage
RN1111,LF(CT
Toshiba Semiconductor and Storage
XCS30-3TQ144I
Xilinx Inc.
EX256-FTQG100
Microsemi Corporation
XC4003E-2VQ100C
Xilinx Inc.
A54SX16A-FG144
Microsemi Corporation
5SGXMA4K1F35C2LN
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
XC6VHX565T-1FFG1924I
Xilinx Inc.
10AX066H2F34I2LG
Intel
EP4CE75F29C6N
Intel
EP4SGX230FF35I4
Intel