Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / RN2101CT(TPL3)
Herstellerteilenummer | RN2101CT(TPL3) |
---|---|
Zukünftige Teilenummer | FT-RN2101CT(TPL3) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2101CT(TPL3) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | PNP - Pre-Biased |
Stromabnehmer (Ic) (max.) | 50mA |
Spannung - Durchschlag Kollektoremitter (max.) | 20V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | 4.7 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 150mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | - |
Leistung max | 50mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2101CT(TPL3) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2101CT(TPL3)-FT |
RN1113(T5L,F,T)
Toshiba Semiconductor and Storage
RN2101,LF(CT
Toshiba Semiconductor and Storage
RN2112,LF(CT
Toshiba Semiconductor and Storage
RN1101,LF(CT
Toshiba Semiconductor and Storage
RN1103,LF(CT
Toshiba Semiconductor and Storage
RN1105,LF(CT
Toshiba Semiconductor and Storage
RN1109,LF(CT
Toshiba Semiconductor and Storage
RN1110,LF(CT
Toshiba Semiconductor and Storage
RN1111,LF(CT
Toshiba Semiconductor and Storage
RN1115,LF(CT
Toshiba Semiconductor and Storage
AGLN020V2-CSG81I
Microsemi Corporation
A54SX32A-1FGG256
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP1K100FC256-2N
Intel
5SGXMBBR3H43I3LN
Intel
5SGXEA5H2F35I3L
Intel
XA7A50T-1CPG236Q
Xilinx Inc.
LFXP2-17E-5FTN256I
Lattice Semiconductor Corporation
LFEC3E-4QN208I
Lattice Semiconductor Corporation
EP2SGX30DF780C5
Intel