Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / RN2103CT(TPL3)
Herstellerteilenummer | RN2103CT(TPL3) |
---|---|
Zukünftige Teilenummer | FT-RN2103CT(TPL3) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2103CT(TPL3) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | PNP - Pre-Biased |
Stromabnehmer (Ic) (max.) | 50mA |
Spannung - Durchschlag Kollektoremitter (max.) | 20V |
Widerstand - Basis (R1) | 22 kOhms |
Widerstand - Emitterbasis (R2) | 22 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 150mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | - |
Leistung max | 50mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2103CT(TPL3) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2103CT(TPL3)-FT |
RN1101,LF(CT
Toshiba Semiconductor and Storage
RN1103,LF(CT
Toshiba Semiconductor and Storage
RN1105,LF(CT
Toshiba Semiconductor and Storage
RN1109,LF(CT
Toshiba Semiconductor and Storage
RN1110,LF(CT
Toshiba Semiconductor and Storage
RN1111,LF(CT
Toshiba Semiconductor and Storage
RN1115,LF(CT
Toshiba Semiconductor and Storage
RN2102,LF(CT
Toshiba Semiconductor and Storage
RN2107,LF(CT
Toshiba Semiconductor and Storage
RN2110,LF(CT
Toshiba Semiconductor and Storage
M1A3P400-FGG484I
Microsemi Corporation
MPF300TL-FCVG484E
Microsemi Corporation
A54SX16P-1VQ100I
Microsemi Corporation
5SGXEB5R1F40C2L
Intel
XC7VX330T-3FFG1157E
Xilinx Inc.
A42MX24-PQ160
Microsemi Corporation
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFE3-150EA-6FN672C
Lattice Semiconductor Corporation
EP20K200RC240-1X
Intel
5SGXMA3H2F35C3N
Intel