Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / RN2316(TE85L,F)
Herstellerteilenummer | RN2316(TE85L,F) |
---|---|
Zukünftige Teilenummer | FT-RN2316(TE85L,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2316(TE85L,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | PNP - Pre-Biased |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 50 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 200MHz |
Leistung max | 100mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-70, SOT-323 |
Supplier Device Package | USM |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2316(TE85L,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2316(TE85L,F)-FT |
RN1117MFV,L3F
Toshiba Semiconductor and Storage
RN1130MFV,L3F
Toshiba Semiconductor and Storage
RN1103MFV(TPL3)
Toshiba Semiconductor and Storage
RN1101MFV,L3F
Toshiba Semiconductor and Storage
RN1103MFV,L3F
Toshiba Semiconductor and Storage
RN1105MFV,L3F
Toshiba Semiconductor and Storage
RN1106MFV(TL3,T)
Toshiba Semiconductor and Storage
RN1109MFV,L3F
Toshiba Semiconductor and Storage
RN1131MFV(TL3,T)
Toshiba Semiconductor and Storage
RN2104MFV,L3F
Toshiba Semiconductor and Storage
XC3S50AN-4TQG144C
Xilinx Inc.
EX128-FTQG100
Microsemi Corporation
XC6SLX25-3FTG256C
Xilinx Inc.
M1A3P250-VQG100
Microsemi Corporation
EP2AGZ350FH29C4N
Intel
EP3SL340F1760I4L
Intel
5SGSMD5H2F35I3N
Intel
XC4VLX160-10FFG1148I
Xilinx Inc.
EPF10K30AQI208-3
Intel
EPF8820AQC208-3
Intel