Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN2510(TE85L,F)
Herstellerteilenummer | RN2510(TE85L,F) |
---|---|
Zukünftige Teilenummer | FT-RN2510(TE85L,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2510(TE85L,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 120 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 300mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-74A, SOT-753 |
Supplier Device Package | SMV |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2510(TE85L,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2510(TE85L,F)-FT |
RN1968(TE85L,F)
Toshiba Semiconductor and Storage
RN1970(TE85L,F)
Toshiba Semiconductor and Storage
RN1971TE85LF
Toshiba Semiconductor and Storage
RN1973(TE85L,F)
Toshiba Semiconductor and Storage
RN2967(TE85L,F)
Toshiba Semiconductor and Storage
RN2969(TE85L,F)
Toshiba Semiconductor and Storage
RN2971(TE85L,F)
Toshiba Semiconductor and Storage
RN1961(TE85L,F)
Toshiba Semiconductor and Storage
RN2961(TE85L,F)
Toshiba Semiconductor and Storage
RN2962(TE85L,F)
Toshiba Semiconductor and Storage
XC7A100T-1FTG256C
Xilinx Inc.
LFE5UM5G-85F-8BG554C
Lattice Semiconductor Corporation
XC4020XL-2HT176I
Xilinx Inc.
10M08DCF484I7G
Intel
5SGXMA4K1F40C1N
Intel
5SGXMA5N3F45I3LN
Intel
A1020B-1PLG44I
Microsemi Corporation
XC4044XL-3HQ208C
Xilinx Inc.
10AX032E1F29E1SG
Intel
EP20K100EBC356-3N
Intel