Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN2510(TE85L,F)
Herstellerteilenummer | RN2510(TE85L,F) |
---|---|
Zukünftige Teilenummer | FT-RN2510(TE85L,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2510(TE85L,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 120 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 300mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-74A, SOT-753 |
Supplier Device Package | SMV |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2510(TE85L,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2510(TE85L,F)-FT |
RN1968(TE85L,F)
Toshiba Semiconductor and Storage
RN1970(TE85L,F)
Toshiba Semiconductor and Storage
RN1971TE85LF
Toshiba Semiconductor and Storage
RN1973(TE85L,F)
Toshiba Semiconductor and Storage
RN2967(TE85L,F)
Toshiba Semiconductor and Storage
RN2969(TE85L,F)
Toshiba Semiconductor and Storage
RN2971(TE85L,F)
Toshiba Semiconductor and Storage
RN1961(TE85L,F)
Toshiba Semiconductor and Storage
RN2961(TE85L,F)
Toshiba Semiconductor and Storage
RN2962(TE85L,F)
Toshiba Semiconductor and Storage
LFXP2-5E-5TN144I
Lattice Semiconductor Corporation
LCMXO1200C-5T144C
Lattice Semiconductor Corporation
APA150-BGG456
Microsemi Corporation
5SGXEA3K3F35C2N
Intel
XC4020XL-09BG256C
Xilinx Inc.
XCV50-5BG256I
Xilinx Inc.
AGL1000V2-FG144
Microsemi Corporation
10AX066K1F35E1SG
Intel
EP1C4F400C8N
Intel
EP4CGX22CF19I7
Intel