Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN2902(T5L,F,T)
Herstellerteilenummer | RN2902(T5L,F,T) |
---|---|
Zukünftige Teilenummer | FT-RN2902(T5L,F,T) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2902(T5L,F,T) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | 2 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 50 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2902(T5L,F,T) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2902(T5L,F,T)-FT |
RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1967FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1968FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1969FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage
LFEC3E-3TN100I
Lattice Semiconductor Corporation
XC3S50-5PQG208C
Xilinx Inc.
XC7S75-L1FGGA484I
Xilinx Inc.
LCMXO2280E-5FTN256C
Lattice Semiconductor Corporation
ICE65L01F-TVQ100C
Lattice Semiconductor Corporation
XC5VLX110T-2FF1136C
Xilinx Inc.
XC6SLX45T-2CSG324I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
EP3C40F324C8N
Intel
EP3C40F324C8
Intel