Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN2909(T5L,F,T)
Herstellerteilenummer | RN2909(T5L,F,T) |
---|---|
Zukünftige Teilenummer | FT-RN2909(T5L,F,T) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2909(T5L,F,T) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | 2 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 47 kOhms |
Widerstand - Emitterbasis (R2) | 22 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 70 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2909(T5L,F,T) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2909(T5L,F,T)-FT |
RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1971FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2902FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage
XC4010E-1BG225C
Xilinx Inc.
A3P030-1VQG100I
Microsemi Corporation
M1AGL250V2-VQ100I
Microsemi Corporation
10CL120ZF484I8G
Intel
10M16DAF484C7G
Intel
5SGSED8K2F40I2N
Intel
5SGXEA3K3F40I4N
Intel
XC7VX690T-3FFG1158E
Xilinx Inc.
XC6SLX4-2CSG225C
Xilinx Inc.
LCMXO640C-3M132C
Lattice Semiconductor Corporation