Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN4905T5LFT
Herstellerteilenummer | RN4905T5LFT |
---|---|
Zukünftige Teilenummer | FT-RN4905T5LFT |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN4905T5LFT Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 2.2 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4905T5LFT Gewicht | kontaktiere uns |
Ersatzteilnummer | RN4905T5LFT-FT |
RN2964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2966FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2967FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2968FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2969FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2970FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2971FE(TE85L,F)
Toshiba Semiconductor and Storage
RN4902FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1701JE(TE85L,F)
Toshiba Semiconductor and Storage
XC3S200-4TQG144I
Xilinx Inc.
M2GL050-1FGG484I
Microsemi Corporation
LCMXO3L-4300C-5BG324C
Lattice Semiconductor Corporation
EP1K50FI256-2N
Intel
5SGXEA4K3F40C3N
Intel
XC7VX690T-1FF1157I
Xilinx Inc.
XC7K325T-L2FFG900I
Xilinx Inc.
LFE3-95EA-6FN1156C
Lattice Semiconductor Corporation
10AX090H4F34I3SG
Intel
EP3SE110F780C3N
Intel