Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RS1E200GNTB
Herstellerteilenummer | RS1E200GNTB |
---|---|
Zukünftige Teilenummer | FT-RS1E200GNTB |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RS1E200GNTB Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 16.8nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1080pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 3W (Ta), 25.1W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-HSOP |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RS1E200GNTB Gewicht | kontaktiere uns |
Ersatzteilnummer | RS1E200GNTB-FT |
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