Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RSH110N03TB1
Herstellerteilenummer | RSH110N03TB1 |
---|---|
Zukünftige Teilenummer | FT-RSH110N03TB1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RSH110N03TB1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 10.7 mOhm @ 11A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 17nC @ 5V |
Vgs (Max) | - |
Eingangskapazität (Ciss) (Max) @ Vds | 1300pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta) |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-SOP |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RSH110N03TB1 Gewicht | kontaktiere uns |
Ersatzteilnummer | RSH110N03TB1-FT |
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