Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SCT3120ALGC11
Herstellerteilenummer | SCT3120ALGC11 |
---|---|
Zukünftige Teilenummer | FT-SCT3120ALGC11 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
SCT3120ALGC11 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | SiCFET (Silicon Carbide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 21A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
Vgs (th) (Max) @ Id | 5.6V @ 3.33mA |
Gateladung (Qg) (Max) @ Vgs | 38nC @ 18V |
Vgs (Max) | +22V, -4V |
Eingangskapazität (Ciss) (Max) @ Vds | 460pF @ 500V |
FET-Funktion | - |
Verlustleistung (max.) | 103W (Tc) |
Betriebstemperatur | 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247N |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SCT3120ALGC11 Gewicht | kontaktiere uns |
Ersatzteilnummer | SCT3120ALGC11-FT |
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