Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SI1025X-T1-GE3
Herstellerteilenummer | SI1025X-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI1025X-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI1025X-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 P-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 190mA |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 1.7nC @ 15V |
Eingangskapazität (Ciss) (Max) @ Vds | 23pF @ 25V |
Leistung max | 250mW |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | SC-89-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1025X-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI1025X-T1-GE3-FT |
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