Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI1031R-T1-GE3
Herstellerteilenummer | SI1031R-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI1031R-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI1031R-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 140mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 150mA, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
Vgs (Max) | ±6V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 250mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SC-75A |
Paket / fall | SC-75A |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1031R-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI1031R-T1-GE3-FT |
SIB452DK-T1-GE3
Vishay Siliconix
SIB417AEDK-T1-GE3
Vishay Siliconix
SIB417EDK-T1-GE3
Vishay Siliconix
SIB404DK-T1-GE3
Vishay Siliconix
SIB406EDK-T1-GE3
Vishay Siliconix
SIB408DK-T1-GE3
Vishay Siliconix
SIB410DK-T1-GE3
Vishay Siliconix
SIB411DK-T1-E3
Vishay Siliconix
SIB411DK-T1-GE3
Vishay Siliconix
SIB412DK-T1-E3
Vishay Siliconix
A3PE600-1FG256I
Microsemi Corporation
A3P1000-2PQ208
Microsemi Corporation
ICE65L04F-LCB132C
Lattice Semiconductor Corporation
ICE40LP640-SWG16TR50
Lattice Semiconductor Corporation
A40MX02-PLG68M
Microsemi Corporation
A42MX16-2TQG176
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
AT40K20-2AJC
Microchip Technology
EP3CLS200F780I7
Intel
EPF6016AFC100-3N
Intel