Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI1300BDL-T1-GE3
Herstellerteilenummer | SI1300BDL-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI1300BDL-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI1300BDL-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 400mA (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 250mA, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.84nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 35pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 190mW (Ta), 200mW (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SC-70-3 |
Paket / fall | SC-70, SOT-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1300BDL-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI1300BDL-T1-GE3-FT |
SIB455EDK-T1-GE3
Vishay Siliconix
SIB456DK-T1-GE3
Vishay Siliconix
SIB457EDK-T1-GE3
Vishay Siliconix
SIB488DK-T1-GE3
Vishay Siliconix
SIB800EDK-T1-GE3
Vishay Siliconix
SISA24DN-T1-GE3
Vishay Siliconix
SISA72DN-T1-GE3
Vishay Siliconix
SI7615CDN-T1-GE3
Vishay Siliconix
SISA34DN-T1-GE3
Vishay Siliconix
SIS782DN-T1-GE3
Vishay Siliconix
ICE40UL640-SWG16ITR50
Lattice Semiconductor Corporation
A54SX16P-VQ100M
Microsemi Corporation
AT40K05AL-1DQC
Microchip Technology
5SGXEA9N2F45I2N
Intel
ICE40LP640-CM36
Lattice Semiconductor Corporation
LFXP2-8E-5FTN256C
Lattice Semiconductor Corporation
LCMXO256E-3M100I
Lattice Semiconductor Corporation
LCMXO1200E-3MN132I
Lattice Semiconductor Corporation
EP3SL110F780C3N
Intel
EP3SL110F780I4
Intel