Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI1499DH-T1-E3
Herstellerteilenummer | SI1499DH-T1-E3 |
---|---|
Zukünftige Teilenummer | FT-SI1499DH-T1-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI1499DH-T1-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 8V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 2A, 4.5V |
Vgs (th) (Max) @ Id | 800mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Vgs (Max) | ±5V |
Eingangskapazität (Ciss) (Max) @ Vds | 650pF @ 4V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 2.78W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SC-70-6 (SOT-363) |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1499DH-T1-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI1499DH-T1-E3-FT |
SPA20N60CFDXKSA1
Infineon Technologies
SPA20N65C3XKSA1
Infineon Technologies
SPA21N50C3XKSA1
Infineon Technologies
TK12A80W,S4X
Toshiba Semiconductor and Storage
TK16A60W5,S4VX
Toshiba Semiconductor and Storage
TK31A60W,S4VX
Toshiba Semiconductor and Storage
TK35A65W,S5X
Toshiba Semiconductor and Storage
TK42A12N1,S4X
Toshiba Semiconductor and Storage
TK5A65W,S5X
Toshiba Semiconductor and Storage
TK6A60W,S4VX
Toshiba Semiconductor and Storage
A1010B-2VQ80I
Microsemi Corporation
EPF10K30ATC144-1
Intel
XC3S500E-4PQ208I
Xilinx Inc.
AFS090-2FG256I
Microsemi Corporation
AGL1000V5-FGG256I
Microsemi Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP2C20F484C6
Intel
10AX022E3F29I2LG
Intel
5CGXBC9A7U19C8N
Intel
EP4CE75F29C8
Intel