Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI2351DS-T1-E3
Herstellerteilenummer | SI2351DS-T1-E3 |
---|---|
Zukünftige Teilenummer | FT-SI2351DS-T1-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI2351DS-T1-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.4A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 5.1nC @ 5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 250pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta), 2.1W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI2351DS-T1-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI2351DS-T1-E3-FT |
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