Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI3851DV-T1-E3
Herstellerteilenummer | SI3851DV-T1-E3 |
---|---|
Zukünftige Teilenummer | FT-SI3851DV-T1-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | LITTLE FOOT® |
SI3851DV-T1-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.8A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) |
Gateladung (Qg) (Max) @ Vgs | 3.6nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 830mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-TSOP |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI3851DV-T1-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI3851DV-T1-E3-FT |
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