Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI5410DU-T1-GE3
Herstellerteilenummer | SI5410DU-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI5410DU-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI5410DU-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 6.6A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 32nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1350pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | 3.1W (Ta), 31W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® ChipFet Single |
Paket / fall | PowerPAK® ChipFET™ Single |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI5410DU-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI5410DU-T1-GE3-FT |
SIA449DJ-T1-GE3
Vishay Siliconix
SIA485DJ-T1-GE3
Vishay Siliconix
SIA431DJ-T1-GE3
Vishay Siliconix
SIA432DJ-T1-GE3
Vishay Siliconix
SIA436DJ-T1-GE3
Vishay Siliconix
SIAA40DJ-T1-GE3
Vishay Siliconix
SQA403EJ-T1_GE3
Vishay Siliconix
SIA106DJ-T1-GE3
Vishay Siliconix
SIA110DJ-T1-GE3
Vishay Siliconix
SIA469DJ-T1-GE3
Vishay Siliconix
A3PE600-1FG256I
Microsemi Corporation
A3P1000-2PQ208
Microsemi Corporation
ICE65L04F-LCB132C
Lattice Semiconductor Corporation
ICE40LP640-SWG16TR50
Lattice Semiconductor Corporation
A40MX02-PLG68M
Microsemi Corporation
A42MX16-2TQG176
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
AT40K20-2AJC
Microchip Technology
EP3CLS200F780I7
Intel
EPF6016AFC100-3N
Intel