Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI6410DQ-T1-GE3
Herstellerteilenummer | SI6410DQ-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI6410DQ-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI6410DQ-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | - |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 7.8A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) |
Gateladung (Qg) (Max) @ Vgs | 33nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-TSSOP |
Paket / fall | 8-TSSOP (0.173", 4.40mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI6410DQ-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI6410DQ-T1-GE3-FT |
SPB80N03S2L-03 G
Infineon Technologies
SPB80N03S2L-04
Infineon Technologies
SPB80N03S2L-04 G
Infineon Technologies
SPB80N03S2L-05
Infineon Technologies
SPB80N03S2L-05 G
Infineon Technologies
SPB80N03S2L-06
Infineon Technologies
SPB80N03S2L-06 G
Infineon Technologies
SPB80N03S2L05T
Infineon Technologies
SPB80N03S2L06T
Infineon Technologies
SPB80N04S2-04
Infineon Technologies
XC4005E-2TQ144I
Xilinx Inc.
M1A3P400-2PQ208
Microsemi Corporation
M2GL050-VFG400I
Microsemi Corporation
5SGSMD4K2F40I3LN
Intel
5SGXMABN2F45I3N
Intel
5SGXMB6R2F43C3N
Intel
EP3SE260F1152I4N
Intel
LFEC1E-3Q208C
Lattice Semiconductor Corporation
LCMXO2-4000HC-6FTG256C
Lattice Semiconductor Corporation
LFE3-95E-8FN672I
Lattice Semiconductor Corporation