Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI6459BDQ-T1-E3
Herstellerteilenummer | SI6459BDQ-T1-E3 |
---|---|
Zukünftige Teilenummer | FT-SI6459BDQ-T1-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI6459BDQ-T1-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.7A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-TSSOP |
Paket / fall | 8-TSSOP (0.173", 4.40mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI6459BDQ-T1-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI6459BDQ-T1-E3-FT |
SPB80N03S2L06T
Infineon Technologies
SPB80N04S2-04
Infineon Technologies
SPB80N04S2-H4
Infineon Technologies
SPB80N04S2L-03
Infineon Technologies
SPB80N06S08ATMA1
Infineon Technologies
SPB80N06S2-05
Infineon Technologies
SPB80N06S2-07
Infineon Technologies
SPB80N06S2-08
Infineon Technologies
SPB80N06S2-09
Infineon Technologies
SPB80N06S2-H5
Infineon Technologies
XC6SLX45-3FG676C
Xilinx Inc.
XC4005L-5PQ208C
Xilinx Inc.
XC2VP2-7FG456C
Xilinx Inc.
A42MX16-2PQ208I
Microsemi Corporation
A42MX16-PQ208M
Microsemi Corporation
LCMXO3LF-9400C-5BG484C
Lattice Semiconductor Corporation
LFE5UM5G-45F-8BG381C
Lattice Semiconductor Corporation
5SGSED6K3F40C2N
Intel
LFEC1E-4Q208C
Lattice Semiconductor Corporation
EP3C40F780C6N
Intel