Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIR870ADP-T1-RE3
Herstellerteilenummer | SIR870ADP-T1-RE3 |
---|---|
Zukünftige Teilenummer | FT-SIR870ADP-T1-RE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIR870ADP-T1-RE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2866pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 104W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIR870ADP-T1-RE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIR870ADP-T1-RE3-FT |
RJK2557DPA-WS#J0
Renesas Electronics America
RJK4006DPD-WS#J2
Renesas Electronics America
RJK4532DPD-E0#J2
Renesas Electronics America
RJK5006DPD-WS#J2
Renesas Electronics America
RJK5015DPK-00#T0
Renesas Electronics America
RJK5030DPD-01#J2
Renesas Electronics America
RJK5030DPD-02#J2
Renesas Electronics America
RJK5031DPD-01#J2
Renesas Electronics America
RJK6002DPD-WS#J2
Renesas Electronics America
RJK6011DJE-00#Z0
Renesas Electronics America
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel