Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK6011DJE-00#Z0
Herstellerteilenummer | RJK6011DJE-00#Z0 |
---|---|
Zukünftige Teilenummer | FT-RJK6011DJE-00#Z0 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK6011DJE-00#Z0 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Last Time Buy |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 52 Ohm @ 50mA, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 3.7nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 25pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 900mW (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92(1) |
Paket / fall | TO-226-3, TO-92-3 Long Body (Formed Leads) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK6011DJE-00#Z0 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK6011DJE-00#Z0-FT |
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