Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIRA90DP-T1-GE3
Herstellerteilenummer | SIRA90DP-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIRA90DP-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
SIRA90DP-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 0.8 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 153nC @ 10V |
Vgs (Max) | +20V, -16V |
Eingangskapazität (Ciss) (Max) @ Vds | 10180pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 104W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIRA90DP-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIRA90DP-T1-GE3-FT |
STO36N60M6
STMicroelectronics
STP12N65M2
STMicroelectronics
STP20N60M2-EP
STMicroelectronics
STP26N60M2
STMicroelectronics
STP35N60M2-EP
STMicroelectronics
STW20N60M2-EP
STMicroelectronics
STW35N60M2-EP
STMicroelectronics
STWA40N60M2
STMicroelectronics
STWA70N60DM2
STMicroelectronics
APTC60SKM24CT1G
Microsemi Corporation
XC3S50-4TQG144I
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XC6SLX25-L1FG484I
Xilinx Inc.
A54SX16A-1FG256
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
AT6005LV-4AC
Microchip Technology
EP3SL200H780I4L
Intel
LFEC6E-3Q208I
Lattice Semiconductor Corporation
LFXP2-17E-6F484C
Lattice Semiconductor Corporation
10AX066K2F40E2LG
Intel