Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIZ998DT-T1-GE3
Herstellerteilenummer | SIZ998DT-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIZ998DT-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIZ998DT-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual), Schottky |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V |
Leistung max | 20.2W, 32.9W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZ998DT-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIZ998DT-T1-GE3-FT |
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