Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIZF300DT-T1-GE3
Herstellerteilenummer | SIZF300DT-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIZF300DT-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SIZF300DT-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 10A, 10V, 1.84 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 10V, 62nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 1100pF @ 15V, 3150pF @ 15V |
Leistung max | 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (6x5) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZF300DT-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIZF300DT-T1-GE3-FT |
SI5905BDC-T1-E3
Vishay Siliconix
SI5905BDC-T1-GE3
Vishay Siliconix
SI5905DC-T1-E3
Vishay Siliconix
SI5905DC-T1-GE3
Vishay Siliconix
SI5915BDC-T1-E3
Vishay Siliconix
SI5915BDC-T1-GE3
Vishay Siliconix
SI5915DC-T1-E3
Vishay Siliconix
SI5915DC-T1-GE3
Vishay Siliconix
SI5920DC-T1-E3
Vishay Siliconix
SI5920DC-T1-GE3
Vishay Siliconix
EX256-PTQ100I
Microsemi Corporation
XC3S1000-4FG676C
Xilinx Inc.
XC4VFX100-11FFG1517C
Xilinx Inc.
APA150-FG144I
Microsemi Corporation
ICE5LP1K-SWG36ITR
Lattice Semiconductor Corporation
EP1K100FC484-3
Intel
EP4SGX290FH29C4N
Intel
EP2AGX65DF25C6NES
Intel
5SGXEB6R3F43C2N
Intel
LFE3-150EA-6LFN672C
Lattice Semiconductor Corporation