Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPB18P06P
Herstellerteilenummer | SPB18P06P |
---|---|
Zukünftige Teilenummer | FT-SPB18P06P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SIPMOS® |
SPB18P06P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 18.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 28nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 860pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 81.1W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPB18P06P Gewicht | kontaktiere uns |
Ersatzteilnummer | SPB18P06P-FT |
NP100P04PLG-E1-AY
Renesas Electronics America
NP100P06PDG-E1-AY
Renesas Electronics America
NP100P06PLG-E1-AY
Renesas Electronics America
NP109N055PUJ-E1B-AY
Renesas Electronics America
NP110N03PUG-E1-AY
Renesas Electronics America
NP110N04PUG-E1-AY
Renesas Electronics America
NP110N055PUG-E1-AY
Renesas Electronics America
NP36P04KDG-E1-AY
Renesas Electronics America
NP36P06KDG-E1-AY
Renesas Electronics America
NP48N055KLE-E1-AY
Renesas Electronics America
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel