Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPB20N60C3ATMA1
Herstellerteilenummer | SPB20N60C3ATMA1 |
---|---|
Zukünftige Teilenummer | FT-SPB20N60C3ATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ |
SPB20N60C3ATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20.7A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
Vgs (th) (Max) @ Id | 3.9V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 114nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2400pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 208W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPB20N60C3ATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SPB20N60C3ATMA1-FT |
NP100P06PLG-E1-AY
Renesas Electronics America
NP109N055PUJ-E1B-AY
Renesas Electronics America
NP110N03PUG-E1-AY
Renesas Electronics America
NP110N04PUG-E1-AY
Renesas Electronics America
NP110N055PUG-E1-AY
Renesas Electronics America
NP36P04KDG-E1-AY
Renesas Electronics America
NP36P06KDG-E1-AY
Renesas Electronics America
NP48N055KLE-E1-AY
Renesas Electronics America
NP50P04KDG-E1-AY
Renesas Electronics America
NP50P06KDG-E1-AY
Renesas Electronics America
A54SX32-TQG144I
Microsemi Corporation
XC4013XL-09PQ208C
Xilinx Inc.
M7A3P1000-1FGG256I
Microsemi Corporation
LFE5UM5G-45F-8BG554I
Lattice Semiconductor Corporation
A3PN030-Z1VQ100I
Microsemi Corporation
EP3SE260H780I4LN
Intel
AGLP060V5-CS289
Microsemi Corporation
A54SX32A-2TQG100I
Microsemi Corporation
10AX090N4F40E3SG
Intel
10AX115N3F40I3SGES
Intel