Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPD18P06PGBTMA1
Herstellerteilenummer | SPD18P06PGBTMA1 |
---|---|
Zukünftige Teilenummer | FT-SPD18P06PGBTMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SIPMOS® |
SPD18P06PGBTMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 18.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 860pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 80W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPD18P06PGBTMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SPD18P06PGBTMA1-FT |
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