Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SQM25N15-52_GE3
Herstellerteilenummer | SQM25N15-52_GE3 |
---|---|
Zukünftige Teilenummer | FT-SQM25N15-52_GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, TrenchFET® |
SQM25N15-52_GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 51nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2360pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 107W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263 (D²Pak) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQM25N15-52_GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SQM25N15-52_GE3-FT |
SIR412DP-T1-GE3
Vishay Siliconix
SIR414DP-T1-GE3
Vishay Siliconix
SIR416DP-T1-GE3
Vishay Siliconix
SIR418DP-T1-GE3
Vishay Siliconix
SIR424DP-T1-GE3
Vishay Siliconix
SIR432DP-T1-GE3
Vishay Siliconix
SIR436DP-T1-GE3
Vishay Siliconix
SIR440DP-T1-GE3
Vishay Siliconix
SIR472ADP-T1-GE3
Vishay Siliconix
SIR472DP-T1-GE3
Vishay Siliconix
XC4005XL-2PQ100I
Xilinx Inc.
XC2VP4-5FG456C
Xilinx Inc.
EPF10K100AFC484-3
Intel
EP4CE10F17C8L
Intel
EP2AGX95DF25C6
Intel
XC6VLX240T-1FF1156C
Xilinx Inc.
XC4VFX40-10FF672C
Xilinx Inc.
XC2V8000-4FFG1152C
Xilinx Inc.
LFXP2-30E-5FT256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4BG256I
Lattice Semiconductor Corporation