Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / STB100N10F7
Herstellerteilenummer | STB100N10F7 |
---|---|
Zukünftige Teilenummer | FT-STB100N10F7 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DeepGATE™, STripFET™ VII |
STB100N10F7 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 61nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4369pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 150W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D2PAK |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
STB100N10F7 Gewicht | kontaktiere uns |
Ersatzteilnummer | STB100N10F7-FT |
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